r07ds0282ej0400 rev.4.00 page 1 of 5 jan 10, 2014 preliminary datasheet 2sk1070 silicon n-channel junction fet application ? low frequency / high frequency amplifier outline 1 2 3 1. drain 2. source 3. gate renesas package code: plsp0003zb-a (package name: mpak) absolute maximum ratings (ta = 25c) item symbol ratings unit gate to drain voltage v gdo ?22 v gate to source voltage v gso ?22 v drain current i d 50 ma gate current i g 10 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c r07ds0282ej0400 rev.4.00 jan 10, 2014
2sk1070 preliminary r07ds0282ej0400 rev.4.00 page 2 of 5 jan 10, 2014 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions gate cutoff current i gss ? ? ?10 na v gs = ?15 v, v ds = 0 gate to source breakdown voltage v (br)gss ?22 ? ? v i g = ?10 a, v ds = 0 drain current i dss * 1 12 ? 40 ma v ds = 5 v, v gs = 0, pulse test gate to source cutoff voltage v gs(off) 0 ? ?2.5 v v ds = 5 v, i d = 10 a forward transfer admittance |y fs | 20 30 ? ms v ds = 5 v, v gs = 0, f = 1 khz input capacitance ciss ? 9 ? pf v ds = 5 v, v gs = 0, f = 1 mhz notes: 1. the 2sk1070 is grouped by i dss as follows. grade c d e mark pic pid pie i dss 12 to 22 18 to 30 27 to 40 main characteristics typical transfer characteristics gate to source voltage v gs (v) drain current i d (ma) 20 16 12 8 4 0 ?1.25 ?1.0 ?0.5 ?0.25 0 ?0.75 v ds = 5 v forward transfer admittance vs. drain current drain current i d (ma) forward transfer admittance ?y fs ? (ms) v ds = 5 v f = 1 khz 100 10 1.0 0.1 0.1 1.0 10 100 0 50 100 150 ambient temperature ta (oc) channel power dissipation pch (mw) 150 100 50 maximum channel dissipation curve typical output characteristics drain to source voltage v ds (v) drain current i d (ma) 20 16 12 8 4 02 6810 4 v gs = 0 v ? 0.1 ? 0.2 ? 0.3 ? 0.4 ? 0.5 ?0.6
2sk1070 preliminary r07ds0282ej0400 rev.4.00 page 3 of 5 jan 10, 2014 input capacitance vs. drain to source voltage drain to source voltage v ds (v) input capacitance c iss (pf) 100 50 20 10 5 2 1 0.1 0.5 2 10 0.2 1.0 5 f = 1 mhz v gs = 0 reverse transfer capacitance vs. drain to source voltage drain to source voltage v ds (v) reverse transfer capacitance c rss (pf) f = 1 mhz v gs = 0 100 50 20 10 5 2 1 0.1 0.2 1.0 5 10 0.5 2 noise figure vs. signal source resistance signal source resistance r g () noise figure nf (db) v ds = 5 v i d = 1 ma f = 1 khz 12 10 8 6 4 2 0 10 100 1 k 10 k 100 k noise figure vs. frequency frequency f (hz) noise figure nf (db) v ds = 5 v i d = 1 ma rg = 1 k 12 10 8 6 4 2 0 10 100 1 k 10 k 100 k forward transfer admittance ?y fs ? (ms) forward transfer admittance vs. gate to source voltage gate to source voltage v gs (v) 50 40 30 20 10 0 ?1.25 ?1.0 ?0.5 ?0.25 0 ?0.75 v ds = 5 v f = 1 khz gate cutoff current vs. gate to source voltage gate to source voltage v gs (v) gate cutoff current i gss (pa) 1,000 100 10 1.0 0.1 0 ?10 ?30 ?50 ?20 ?40 v ds = 0
2sk1070 preliminary r07ds0282ej0400 rev.4.00 page 4 of 5 jan 10, 2014 package dimensions mass (typ) [g] 0.011 previous code renesas code plsp0003zb-a mpak(t) / mpak(t)v jeita package code sc-59a ? 2013 renesas electronics corporation. all rights reserved. d e a aa b xsa m e h e a a 2 a 1 s b a-a section c qc l l 1 l p a 3 a a 1 a 2 a 3 b c d e e h e l l 1 l p x q 1.0 0 1.0 ? 0.35 0.1 2.7 1.35 ? 2.2 0.35 0.15 0.25 ? ? min nom dimensions in millimeters reference symbol max ? ? 1.1 0.25 0.4 0.16 ? 1.5 0.95 2.8 ? ? ? ? 0.3 1.3 0.1 1.2 ? 0.5 0.26 3.1 1.65 ? 3.0 0.75 0.55 0.65 0.05 ?
2sk1070 preliminary r07ds0282ej0400 rev.4.00 page 5 of 5 jan 10, 2014 ordering information orderable part number quan tity shipping container 2sk1070pictl-e 2sk1070pidtl-e 2sk1070pietl-e 2sk1070pictl-h 2sk1070pidtl-h 2sk1070pietl-h 3000 178 mm reel, 8 mm emboss taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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